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​Journal Publications​

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in preparation - GFO growth

in preparation - ALD process for tin oxde

in preparation - thermal conductivity of Ga2O3

In preparation - SnO2 lithiophilic layer for LMB

Submitted - Radiation study of SnO2 devices

Submitted - Heterogeneous integration

under review - ZFO growth

under review - ZGO growth

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  1. Gyeong Ryul Lee,§ Dong-Gwan Kim,§ Wonwoo Suh,§ Yoonho Choi, Donghan Kim, Mohammad M. Afandi, Juhui Oh, Hongsik Park, Celesta S. Chang,* Hyun S. Kum,* Taehoon Lee,* and Roy B. Chung*, "Charge-Mediated Remote Epitaxy of Ga2O3 via MoS2", accepted to Sci. Adv. (2026.08)

  2. B. Li, S. Luo, J. Jung, B. G. Duersch, Q. Jiang, C. Chang, L. Lau, Z. Zhang, J. Li, H. Ellis, I. Rahaman, S. Huang, R. B. Chung*, K . Fu*, and Y. Zhao*, Appl. Phys. Lett. 128, 212112 (2026). DOI: https://doi.org/10.1063/5.0324528

  3. H. Kim, J. Kim, S. Park, D. Lee, J. Byeon, J. Seo, D. S. Kim*, and R. B. Chung*, "Effects of proton radiation on tin oxide: implications for space electronics", Adv. Elec. Mat. 11, e00557 (2025). DOI: https://doi.org/10.1002/aelm.202500557

  4. H. Y. Kang, J. Jung, Y. S. Hwang, and R. B. Chung*, "Influence of substrate atomic symmetry on the epitaxy and rotational domain formation of k-Ga2O3", J. Crystal Growth 671, 128371 (2025). DOI: https://doi.org/10.1016/j.jcrysgro.2025.128371

  5. C. Kim+, Y. Choi+, D.-G. Kim+, H. Y. Kang+, J. Jung, G. R. Lee, H. S. Kum, T. H. Lee, and R. B. Chung*, "Interface formed via spontaneous phase transition from α- to κ-Ga2O3", ACS Applied Materials and Interfaces 17, 41215 (2025).

  6. S. Kim, H. Kim, S. Park, D. Lee, and R. B. Chung*, "Enhanced SnO2 FETs via Selective Area Fluorine Doping", Materials Science in Semiconductor Processing 192, 109421 (2025).

  7. Y. Choi, C. Kim, Y. Hwang, S. Park, H. Y. Kang, S. Chakraborty,  and R. B. Chung*, "Fluorine-Doped N-Type α-Ga2O3 and Its Phase Stability", Crystal Growth and Design 25, 1023 (2025).

  8. Y. Yun, D. Vidyasagar, S. Kim, S. W. Yang, D. Im, R. K. Gunasekaran, S. Lee, J. Jung, W. C. Choi, R. B. Chung, D. H. Kim, J.‐S. Park, S. Lee, "Simultaneous passivation of surface and bulk defects in all‐perovskite tandem solar cells using bifunctional lithium salts", InfoMat (2025).

  9. S. Kim, D. Im, Y. Yun, D. Vidyasagar, S. W. Yang, W. C. Choi, R. K. Gunasekaran, S. Lee, Y. T. Kim, M. Y. Woo, D. H. Kim, J. H. Noh, J. Heo, R. B. Chung, S. Lee, "Stabilizing Wide‐Bandgap Perovskite with Nanoscale Inorganic Halide Barriers for Next‐Generation Tandem Technology", Advanced Energy Materials (2024).

  10. G. Lee, C. Yang, and R. B. Chung*, "Uniformity and thickness control of MoS2 during thermolysis", Appl. Sci. Converg. Technol. 33, 18 (2024).

  11. C. Park+, S. Kim+, D. Lee, and R. B. Chung*, "High-performance tin oxide field-effect transistors deposited by thermal atomic layer deposition", Mater. Today Comm. 37, 107064 (2023). (+: authors with equal contributions)

  12. J. Kim, G. Lee, R. B. Chung*, P. J. Kim*, and J. Choi*, "Homogeneous Li deposition guided by ultra-thin lithiophilic layer for highly stable anode-free batteries", Energy Storage Materials 61, 102899 (2023).

  13. H. Y. Kang+, M. J. Yeom+, J. Y. Yang, Y. Choi, J. Lee, C. Park, G. Yoo*, and R. B. Chung*, "Epitaxial κ-Ga2O3/GaN heterostructure for high electron mobility transistors", Mater. Today Phys. 31, 101002 (2023). (Link) (+: authors with equal contributions)

  14. C. Park+, S. Kim+, G. Lee, and R. B. Chung*, "Tin Oxide Field-Effect Transistors Deposited by Thermal Atomic Layer Deposition with H₂O Reactant", Appl. Sci. Converg. Technol. 31, 145 (2022) (Link) (+: authors with equal contributions)

  15. H. Y. Kang+, Y. Choi+, K. Pyeon, T. H. Lee, R. B. Chung*, "Experimental and theoretical investigation of the effect of Sn on κ-Ga2O3 growth",  J Mater Sci 57, 19882–19891 (2022). (Link) (+: authors with equal contributions)

  16. G. Lee+, M. Seong+, S. Kim+, K. Pyeon, and R. B. Chung*, "Conductive SnO2-x thin films deposited by thermal ALD with H2O reactant", Vacuum 200, 111018 (2022). (Link) (+: authors with equal contributions)

  17. M. J. Yeom, J. Y. Yang, C. H. Lee, J. Heo, R. B. Chung*, and G. Yoo*, "Low sub-threshold slope AlGaN/GaN MOS-HEMT with spike annealed HfO2 gate dielectric", micromachines 12, 1441 (2021). (Link)

  18. H. Y. Kang+, H. Kang+, E. Lee+, G. Lee, and R. B. Chung*, "Sn-induced phase stabilization and enhanced thermal stability of κ-Ga2O3 grown by mist-CVD",  ACS Omega 6, 46, 31298 (2021). (Link) (+: authors with equal contributions)

  19. Y. J. Jeong, J. Y. Yang, C. H. Lee, R. Park. G. Lee, R. B. Chung*, and G. Yoo*, "Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs", Appl. Surf. Sci. 558, 149936 (2021). (Link)

  20. 이경렬, 박류빈, R. B. Chung*, "열처리 공정을 이용한 Si-doped β-Ga2O3 박막의 전기적 특성의 이해", J. Microelectron. Packag. Soc., 27(4), 19-24 (2020). (Link)

  21. R. B. Chung*, "Photo- and electro-luminescence studies of semipolar (11-22) InxAl1-xN", J. Appl. Physics 128, 043104 (2020). (Link)

  22. D.-H. Hop, R. B. Chung, Y.-W. Heo, J.-J. Kim, and J.-H. Lee, "Oxygen nonstoichiometry and electrical properties of La2–xSrxNiO4+δ (0 ≤ x ≤ 0.5)", J. Korean Ceram. Soc. 57, 416 (2020). (Link) 

  23. R. B. Chung*, A. V. Sampath, and S. Nakamura, “Strain relaxation process of undoped and Si-doped semipolar AlxGa1-xN grown on (20-21) bulk GaN substrate”, J. Crystal Growth 533, 125467 (2020). (Link)

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Domestic and International Patents and Applications

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  1. Domestic patent: 결정성 향상된 α-산화갈륨 박막의 제조방법 및 이 방법에 의해 제조된 α-산화갈륨 박막 (등록번호: 10-3005372)

  2. Domestic patent: 고전자이동도 트랜지스터 및 고전자이동도 트랜지스터 제조 방법 (등록번호: 10-2790971-00-00)

  3. Domestic patent: 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 (등록 번호: 10-2394975-00-00) 

  4. US Patent# 8299452: Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes

  5. US Patent# 8357925: Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

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Before 2019 (before joining KNU)

  1. R. B. Chung*, G. A. Garrett, R. W. Enck, A. V. Sampath, M. Wraback, and M. L. Reed, “Optical polarization switching in low In-content InGaN MQWs on semipolar (20-21) GaN via strain engineering”, Appl. Phys. Lett. 111, 231107 (2017). (Link)

  2. R. B. Chung*, L. E. Rodak, R. W. Enck, A. V. Sampath, M. Wraback, and M. L. Reed, “Growth and impurity characterizations of AlN on (0001) sapphire grown by spatially pulsed MOCVD”, Phys. Sol. Status A 213, 851 (2016).

  3. R. B. Chung, D. Kim, S. K. Lim, J. S. Choi, K. J. Kim, B. H. Lee, K. S. Jung, H. J. Kim-Lee, W. J. Lee, K. Woo, B. Park, “4-Inch layer transferred GaN template by ion cut for nitride based light emitting diodes”, Appl. Phys. Exp.  6, 111005 (2013).

  4. R. Shivaraman, Y-R Wu, S. Choi, R. B. Chung, J. S. Speck, “Atom probe tomography of III-Nitrides based semiconducting devices”, Microscopy and Microanalysis 19, 956 (2013).

  5. R. B. Chung*, C. S. Han, C. C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, “The reduction of the efficiency droop using AlInN/GaN superlattice electron blocking layer in light emitting diodes”, Appl. Phys. Lett. 101, 131113 (2012). Highlighted in Semiconductor Today: http://www.semiconductor-today.com/news_items/2012/OCT/UCSB_091012.html

  6. R. B. Chung, H. T. Chen, C. C. Pan, J. S. Ha, S. P. DenBaars, and S. Nakamura, “The polarization field dependence of Ti/Al based ohmic contacts on N-type semipolar GaN”, Appl. Phys. Lett. 100, 091104 (2012).

  7. G. A. Garrett, P. Rotella, H. Shen, M. Wraback, D. A. Haeger, R. B. Chung, N. Pfaff, E. C. Young, S. P. DenBaars, J. S. Speck, D. A. Cohen, “Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN”, Phys. Stat. Sol. B 249, 507 (2012).

  8. D. A. Haeger, E. Young, R. B. Chung, F. Wu, N. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, and D. A. Cohen, “384 nm laser diode grown on a (20-21) semipolar relaxed AlGaN buffer layer”, Appl. Phys. Lett. 100, 161107 (2012).

  9. R. B. Chung, O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Temperature dependent capacitance-voltage analysis of unintentionally doped Al0.82In0.18N grown on GaN”, Jpn. J. Appl. Phys. 50, 101001 (2011).

  10. R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition”, J. Crystal Growth 324, 163 (2011).

  11. Y. Zhao, S. Tanaka, Q. Yan, C.Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light emitting diodes”, Appl. Phys. Lett. 99, 051109 (2011).

  12. S. W. Kaun, M. H. Wong, S. Dasgupta, S. Choi, R. B. Chung, U. K. Mishra, and J. S. Speck, “Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors”, Appl. Phys. Express 4, 024101 (2011).

  13. R. B. Chung, Y. Lin, I. Koslow, N. Pfaff, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescen characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths”, Jpn. J. Appl. Phys. 49, 070203 (2010).

  14. S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High efficiency single quantum well green and yellow-green light emitting diodes on semipolar (20-21) substrates”, Appl. Phys. Express 3, 122102 (2010).

  15. I. Koslow, J. Sonoda, R. B. Chung, C. C. Pan, S. Brinkley, H. Ohta, S. Nakamura, and S. P. DenBaars, “High power and high efficiency blue InGaN light emitting diodes on free standing semipolar (30-3-1) bulk GaN substrates”, Jpn. J. Appl. Physics 49, 080203 (2010).

  16. Z. Chen, Y. Pei, S. Newman, D. Brown, R. B. Chung, S. Keller, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Growth of AlGaN/GaN/AlGaN double heterojunction field transistors and the observation of compositional pulling effect”, Appl. Phys. Lett. 94, 171117 (2009).

  17. Z. Chen, Y. Pei, S. Newman, R. Chu, D. Brown, R. B. Chung, S. Keller, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Growth of AlGaN/GaN heterojunction field-effect transistors on insulating GaN using an AlGaN interlayer”, Appl. Phys. Lett. 94, 112108 (2009).

  18. K. Vampola, N. Fellows, H. Masui, S. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonada, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, “Highly efficient broad area blue and white light-emitting diodes grown on bulk GaN substrates”, Phys. Stat. Sol. A. 206, 200 (2009).

  19. Z. Chen, S. Newman, D. Brown, R. B. Chung, S. Keller, U. K. Mishra, S. P. DenBaars, and S. Nakamura, “High-quality AlN grown on SiC by metal organic chemical vapor deposition”, Appl. Phys. Lett. 93, 191906 (2008).

  20. N. Fellows, H. Sato, Y. Lin, R. B. Chung, S. P. DenBaars, and S. Nakamura, “Dichromatic color tuning with InGaN-based light-emitting diodes”, App. Phys. Lett. 93, 121112 (2008).

  21. H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diode grown on semipolar (11-22) bulk GaN substrates”, Appl. Phys. Lett. 92, 221110 (2008).

  22. H. Zhong, A. Tyagi, N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on free-standing semipolar (10-1-1) bulk GaN substrates”, Appl. Phys. Lett. 90, 233504 (2007).

  23. H. Sato, A. Tyagi, H. Zhong, N. Fellow, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on free-standing semipolar (11-2-2) bulk GaN substrate”, Phys. Stat. Sol. (RRL) 1, 162 (2007).

  24. A. Tyagi, H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (10-1-1) InGaN/GaN laser diodes on bulk GaN substrates”, Jpn. J. Appl. Phys. 46, L444 (2007).

  25. H. Zhong, A. Tyagi, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of high power blue-green light emitting diode on semipolar (11-22) bulk GaN substrate”, Electronics Lett. 43, No. 15 (2007).​

© 2020 by EPEM Lab

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