Emerging Photonic and Electronic Materials Lab
Research objectives
Here at the Emerging Photonic and Electronic Materials Lab, we focus on the synthesis of inorganic materials and the study of the basic material properties. Our goal is to understand the electrical, optical, and structural properties of materials better and figure out ways to improve the performance of a device of interest. Currently, we are studying GaN, Ga2O3, and SnO2 for various applications including but not limited to solid-state electronic devices and energy storage devices. A long-term objective of the lab is to explore new materials for energy-efficient electronics and devise new ways to make them.
Gallium Nitride
Gallium Oxide
Synthesis of new 2D and 3D materials
Current Research efforts
High power semiconductor
In our lab, we focus on understanding the basic properties of Ga2O3 to enhance the device performance of power electronics beyond what is achievable today. We are particularly interested in
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Understanding the impacts of point defects such as vacancies on the electrical property
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Understanding the electrical properties of oxygen-substitutional dopants
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Controlled CVD growth of other Ga2O3 phases such as kappa-Ga2O3 for high electron mobility transistors
Figure from S. Reese et al., Joule 3, 903 (2019).
Oxide thin films by ALD
We are also exploring other oxides including Al2O3 and SnO2-x for various applications such as a thin film transistor. We are particularly interested in the development of SnO2-based field-effect transistors compatible with Si CMOS technology.